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| SHINDENGEN Switching Power Transistor FS Series 2SC4833 (TP5V40FS) 5A NPN OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Junction TemperatureTj 150 *Z Collector to Base Voltage V 500 V CBO Collector to Emitter Voltage V 400 V CEO Emitter to Base Voltage V 7 V EBO Collector Current DC I 5 A C Collector Current Peak I 10 CP Base Current DC A I 2 B Base Current Peak I 4 BP Total Transistor DissipationTc = 25*Z P 35 W T Dielectric Strength Vdis Terminals to case, AC 12minute kV Mounting Torque TOR (Recommended torque 0.5 Nm : 0.3Nm) *oeElectrical Characteristics (Tc=25*Z) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining0.1A V (sus)I = Voltage Min 400 V CEO C Collector Cutoff Current At rated Voltage I Max 0.1 A m CBO I Max 0.1 CEO Emitter Cutoff Current I Max 0.1 A m EBO At rated Voltage DC Current Gain h V = 2V, I = 10*25 CE C 2.5A FE h = Min 10 CE C 1mA FEL V = 2V, I Collector to Emitter Saturation2.5A V (sat) I = Voltage Max 1.0 V CE C Base to Emitter Saturation Voltage V (sat) I = 0.5A Max 1.5 V BE B Thermal Resistance AEjc Junction to case Max 3.57 *Z/W Transition Frequency fT V = 10V, 0.5A = TYP 13 Hz M CE C I Turn on Time ton I = 2.5A Max 0.3 C Storage Time = ts I = 0.5A,1A Max 1.3Es B1 B2 I Fall Time tf R= 60, V = 4V Max 0.1 L BB2 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SC4833 hFE - I C VCE = 2V 100 Tc = 150C 100C 50C 25C 0C -25C -55C DC Current Gain hFE 10 1 0.001 0.01 0.1 1 10 Collector Current IC [A] 2SC4833 Saturation Voltage 3 1A 2.5A 5A 10A 2.5 3 IC = 0.5A 2.5 2 2 1.5 10A 2.5A 5A 1.5 1 1A 1 Collector-Emitter Voltage VCE [V] 0.5 0.5 Tc = 25C 0 0.1 1 4 0 0.01 Base Current IB [A] Base-Emitter Voltage VBE [V] IC = 0.5A 2SC4833 Switching Time - IC 1000 ts Switching Time tSW [ns] ton 100 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 150V Tc = 25C 10 0 1 2 3 4 5 Collector Current IC [A] 2SC4833 Switching Time - Tc ts 1000 Switching Time tSW [ns] ton 100 tf IC = 2.5A IB1 = 0.5A IB2 = 1A VBB2 = 4V R L = 60 10 0 50 100 150 Case Temperature Tc [C] 2SC4833 10 10ms 1ms Forward Bias SOA 200s 100s PT limit 1 Collector Current IC [A] IS/B limit 0.1 Tc = 25C Single Pulse 0.01 10 100 400 Collector-Emitter Voltage VCE [V] 2SC4833 100 Collector Current Derating Collector Current Derating [%] 80 IS/B limit 60 40 PT limit 20 VCE = fixed 0 0 50 100 150 Case Temperature Tc [C] 2SC4833 10 Reverse Bias SOA 8 Collector Current IC [A] 6 4 2 IB1 = 0.2IC IB2 = 1A VBB2 = 5V Tc < 150C 0 0 100 200 300 400 500 Collector-Emitter Voltage VCE [V] 2SC4833 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-3 10-2 10-1 100 101 102 10-5 10-4 Time t [s] |
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